 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSE213 PACKAGE DIMENSIONS 0.060 (1.50) 0.174 (4.44) QSE214 R 0.030 (0.76) 0.047 (1.20) 0.224 (5.71) 0.177 (4.51) 0.030 (0.76) 0.5 (12.7) MIN EMITTER 0.060 (1.52) 0.020 (0.51) SQ. (2X) 0.100 (2.54) SCHEMATIC Collector NOTES: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of .010 (.25) on all non-nominal dimensions unless otherwise specified. Emitter DESCRIPTION The QSE213/QSE214 is a silicon phototransistor encapsulated in a medium angle, infrared transparent, black thin plastic sidelooker package. FEATURES * * * * * * NPN Silicon Phototransistor Package Type: Sidelooker Medium Reception Angle, 50 Daylight Filter Black Epoxy Package Matching Emitter: QEE213 (c) 2002 Fairchild Semiconductor Corporation Page 1 of 4 7/23/02 PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSE213 ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise specified) Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(2,3,4) Symbol TOPR TSTG TSOL-I TSOL-F VCE VEC PD Rating -40 to +100 -40 to +100 240 for 5 sec 260 for 10 sec 30 5 100 Unit C C C C V V mW QSE214 Soldering Temperature (Flow)(2,3) Collector-Emitter Voltage Emitter-Collector Voltage Power Dissipation(1) ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25C unless otherwise specified) Parameter Peak Sensitivity Reception Angle Collector Emitter Dark Current Collector Emitter Breakdown Emitter Collector Breakdown On-State Collector Current VCE = 10 V, Ee = 0 IC = 1 mA IE = 100 A Ee = 0.5 mW/cm2, VCE = 5 V VCE = 5 V(5) Saturation Voltage Ee = 0.5 mW/cm2, IC = 0.1 Rise Time Fall Time mA(5) tr tf -- -- 8 8 -- -- s VCE(SAT) -- -- 0.4 V (QSE213) (QSE214) Test Conditions Symbol PS ID BVCEO BVECO IC(ON) Min -- -- -- 30 5 0.2 1.00 Typ 880 25 -- -- -- -- -- Max -- -- 100 -- -- 1.50 -- Units nM Deg. nA V V mA VCC = 5V, RL = 100, IC = 1mA NOTES: 1. Derate power dissipation linearly 1.33 mW/C above 25C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron 1/16" (1.6 mm) minimum from housing. 5. = 950 nm GaAs. (c) 2002 Fairchild Semiconductor Corporation Page 2 of 4 7/23/02 PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSE213 TYPICAL PERFORMANCE CURVES Fig.1 Dark Current vs. Collector Emitter Voltage 101 QSE214 Fig.2 Radiation Diagram ID - DARK CURRENT (mA) 100 120 130 10-1 150 10-2 160 170 10-3 0 10 20 30 40 50 60 180 1.0 0.8 0.6 140 110 100 90 80 70 60 50 40 30 20 10 0 0.4 0.2 0 0.2 0.4 0.6 0.8 1.0 VCE - COLLECTOR EMITTER VOLTAGE (V) Fig.3 Light Current vs. Ambient Temperature IL - NORMALIZED LIGHT CURRENT IL - NORMALIZED LIGHT CURRENT 10 Normalized to: VCE = 5 V Ie = 0.5 mW/cm2 TA = 25C Fig.4 Light Current vs. Collector to Emitter Voltage 10 Ie = 1 mW/cm2 1 Ie = 0.5 mW/cm2 Ie = 0.2 mW/cm2 0.1 Ie = 0.1 mW/cm2 1 0.01 Normalized to: VCE = 5 V Ie = 0.5 mW/cm2 TA = 25C 1 10 0.1 -40 -20 0 20 40 60 80 100 0.001 0.1 TA - AMBIENT TEMPERATURE (C) VCE - COLLECTOR - EMITTER VOLTAGE (V) Fig.5 Dark Current vs. Ambient Temperature ID - NORMALIZED DARK CURRENT 10 3 102 Normalized to: VCE = 25 V TA = 25C VCE = 25 V 101 VCE = 10 V 100 10-1 40 60 80 100 TA - AMBIENT TEMPERATURE (C) (c) 2002 Fairchild Semiconductor Corporation Page 3 of 4 7/23/02 PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSE213 QSE214 DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. (c) 2002 Fairchild Semiconductor Corporation Page 4 of 4 7/23/02 |
Price & Availability of QSE214
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |